CONCENTRATION DEPENDENCE OF CRYSTAL-FIELD EFFECTS IN AMORPHOUS Cex Si1-x ALLOYS

D. Malterre , A. Siari , J. Durand , G. Marchal

Crystal-field effects on Ce ions in amorphous Cex Si1-x alloys (0.06 ≤ x ≤ 0.70) are analyzed through the temperature dependence of the magnetic susceptibility. The low-temperature Curie-Weiss constant exhibits a strong concentration dependence on the Si rich side to undergo a sharp minimum around x = 0.28, suggesting an abrupt change of the local symmetry about the Ce ions for this composition.

Domaines: Articles anciens

D. Malterre, A. Siari, J. Durand, G. Marchal. CONCENTRATION DEPENDENCE OF CRYSTAL-FIELD EFFECTS IN AMORPHOUS Cex Si1-x ALLOYS. Journal de Physique Colloques, 1985, 46 (C8), pp.C8-205-C8-209. ⟨10.1051/jphyscol:1985829⟩. ⟨jpa-00225172⟩