RAMAN SPECTROSCOPY CHARACTERIZATION OF POLYCRYSTALLINE GaP THIN FILMS GROWN BY MO-CVD PROCESS USING [Et2Ga - PEt2]3 AS ONLY SOURCE

F. Maury , M. Combes , G. Constant , Robert Carles , J. Renucci

Growth of polycrystalline GaP layers has been obtained between 650 and 775°C, by low pressure metalorganic chemical vapor deposition, using the only molecule [Et2Ga-PEt2]3 as element source. The disorder has been characterized by Raman spectroscopy.

Domaines: Articles anciens

F. Maury, M. Combes, G. Constant, Robert Carles, J. Renucci. RAMAN SPECTROSCOPY CHARACTERIZATION OF POLYCRYSTALLINE GaP THIN FILMS GROWN BY MO-CVD PROCESS USING [Et2Ga - PEt2]3 AS ONLY SOURCE. Journal de Physique Colloques, 1982, 43 (C1), pp.C1-347-C1-352. ⟨10.1051/jphyscol:1982146⟩. ⟨jpa-00221803⟩