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Communication Dans Un Congrès Journal de Physique Colloques Année : 1981

INTERACTION BETWEEN ARGON AND DOPANTS IN SPUTTERED a-Si : H

Résumé

The concentrations of As, B, H, Ar and Si in sputtered a-Si : H are measured by helium Rutherford backscattering and nuclear reactions analysis. Excess or deficit of hydrogen and argon by comparison with intrinsic a-Si : H are found in presence of dopants at high deposition rate. This is related to the plasma deposition method and would suggest micro grain structure in the deposited layer.

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Dates et versions

jpa-00220800 , version 1 (04-02-2008)

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M. Toulemonde, J. Grob, J. Bruyère, A. Deneuville, H. Hamdi, et al.. INTERACTION BETWEEN ARGON AND DOPANTS IN SPUTTERED a-Si : H. Ninth International Conference on Amorphous and Liquid Semiconductors, 1981, Grenoble, France. pp.C4-799-C4-801, ⟨10.1051/jphyscol:19814175⟩. ⟨jpa-00220800⟩
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