ELECTRICAL RECOMBINATION BEHAVIOUR AT DISLOCATIONS IN GALLIUM PHOSPHIDE AND SILICON

G. Booker , A. Ourmazd , D. Darby

This paper reviews some of the recent results obtained regarding electrical recombination at dislocations in Si and GaP using the TEM method and the SEM EBIC and CL methods. The SEM methods have spatial resolutions down to 1 µm, and so electrical and luminescent information can be obtained from individual dislocations. By examining the same areas by TEM and SEM methods, structural, electrical and luminescent data can be compared. The results indicate that the recombination efficiency is controlled by the diffusion of carriers to the dislocation for GaP, but by the recombination mechanism at the dislocation for Si. For Si, markedly different recombination efficiencies occur at dissociated and undissociated dislocations.

Domaines: Articles anciens

G. Booker, A. Ourmazd, D. Darby. ELECTRICAL RECOMBINATION BEHAVIOUR AT DISLOCATIONS IN GALLIUM PHOSPHIDE AND SILICON. Journal de Physique Colloques, 1979, 40 (C6), pp.C6-19-C6-21. ⟨10.1051/jphyscol:1979604⟩. ⟨jpa-00219020⟩