Analytic expressions of the magnetoresistance due to localization and electron-electron interaction effects. - Application to the amorphous alloys La3Al and La3Ga

J.C. Ousset , S. Askenazy , H. Rakoto , Jean-Marc Broto

We start from the theoretical calculations of Alt'shuler et al. and Lee and Ramakrishnan for the contributions to magnetoresistance from weak localization and electron-electron interactions in a disordered system. We give analytic expressions which can be more easily handled by experimentalists. Our results on the amorphous alloys La3Al and La3Ga are presented and interpreted using these equations to get the best fit.

Mots clés: aluminium alloys; amorphous state; gallium alloys; lanthanum alloys; localised electron states; magnetoresistance

Domaines: Articles anciens

J.C. Ousset, S. Askenazy, H. Rakoto, Jean-Marc Broto. Analytic expressions of the magnetoresistance due to localization and electron-electron interaction effects. - Application to the amorphous alloys La3Al and La3Ga. Journal de Physique, 1985, 46 (12), pp.2145-2149. ⟨10.1051/jphys:0198500460120214500⟩. ⟨jpa-00210163⟩