Spectroscopy of the neutral sulphur-related centres in silicon

B. Pajot , C. Naud

A high resolution infrared absorption study of silicon samples doped with sulphur by implantation and annealing reveals the presence of four sulphur-related centres, related to the way the samples were annealed out. The centre with an ionization energy of 82.2 meV has not been reported previously. The lines observed are generally sharp and the position of all the odd-parity levels closely match the effective mass theory values while the even-parity transitions are characteristic of each centre. For many lines, the width is comparable to that observed for phosphorus lines at similar concentrations while some specific broadening effects for other lines.

Mots clés: elemental semiconductors; impurity and defect absorption spectra of inorganic solids; impurity electron states; infrared spectra of inorganic solids; silicon; spectral line breadth; sulphur

Domaines: Articles anciens

B. Pajot, C. Naud. Spectroscopy of the neutral sulphur-related centres in silicon. Journal de Physique, 1984, 45 (3), pp.539-543. ⟨10.1051/jphys:01984004503053900⟩. ⟨jpa-00209784⟩