Low-temperature technique of thin silicon ion implanted epitaxial detectors

A.J. Kordyasz , N. Le Neindre (1) , M. Pârlog (1) , G. Casini , R. Bougault (1) , G. Poggi , A. Bednarek , M. Kowalczyk , O. Lopez (1) , Y. Merrer (1) , E. Vient (1) , J.D. Frankland (2) , Eric Bonnet (2) , A. Chbihi (2) , Diego D. Gruyer (2) , B. Borderie (3) , G. Ademard (3) , P. Edelbruck (3) , M.F. Rivet (3) , F. Salomon (3) , M. Bini , S. Valdre , E. Scarlini , G. Pasquali , G. Pastore , S. Piantelli , A. Stefanini , A. Olmi , S. Barlini , A. Boiano , E. Rosato , A. Meoli , A. Ordine , G. Spadaccini , G. Tortone , M. Vigilante , E. Vanzanella , M. Bruno , S. Serra , L. Morelli , M. Guerzoni , R. Alba , D. Santonocito , C. Maiolino , M. Cinausero , F. Gramegna , T. Marchi , T. Kozik , P. Kulig , T. Twarog , Z. Sosin , K. Gasior , A. Grzeszczuk , W. Zipper , J. Sarnecki , D. Lipinski , H. Wodzinska , A. Brzozowski , M. Teodorczyk , M. Gajewski , A. Zagojski , K. Krzyzak , K.J. Tarasiuk , Z. Khabanowa , L. Kordyasz

1 LPCC - Laboratoire de physique corpusculaire de Caen
2 GANIL - Grand Accélérateur National d'Ions Lourds
3 IPNO - Institut de Physique Nucléaire d'Orsay

A new technique of large-area thin ion implanted silicon detectors has been developed within the R&D performed by the FAZIA Collaboration. The essence of the technique is the application of a lowtemperature baking process instead of high-temperature annealing. This thermal treatment is performed after B+ ion implantation and Al evaporation of detector contacts, made by using a single adjusted Al mask. Extremely thin silicon pads can be therefore obtained. The thickness distribution along the X and Y directions was measured for a prototype chip by the energy loss of α-particles from 241Am (Eα = 5.5MeV). Preliminary tests on the first thin detector (area ≈ 20 × 20mm2) were performed at the INFN-LNS cyclotron in Catania (Italy) using products emitted in the heavy-ion reaction 84Kr(E = 35AMeV)+112Sn. The ΔE−E ion identification plot was obtained using a telescope consisting of our thin ΔE detector (21 μm thick) followed by a typical FAZIA 510 μm E detector of the same active area. The charge distribution of measured ions is presented together with a quantitative evaluation of the quality of the Z resolution. The threshold is lower than 2AMeV depending on the ion charge.

Domaines: Physique Nucléaire Expérimentale [nucl-ex]; Instrumentations et Détecteurs [physics.ins-det]

A.J. Kordyasz, N. Le Neindre, M. Pârlog, G. Casini, R. Bougault, et al.. Low-temperature technique of thin silicon ion implanted epitaxial detectors. European Physical Journal A, 2015, 51, pp.15. ⟨10.1140/epja/i2015-15015-2⟩. ⟨in2p3-01120218⟩