Determination of defects in 6H-SiC single crystals irradiated with 20 MeV Au ions

A. Gentils (1) , M. F. Barthe (2) , L. Thome (3) , M. Behar (4)

1 CSNSM PS2
2 CSNSM - Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse
3 CSNSM PCI
4 UFRGS - Universidade Federal do Rio Grande do Sul [Porto Alegre]

In this paper, the determination of the defects induced by 20 MeV Au irradiations in hexagonal silicon carbide single crystals is discussed. The evolution of the irradiation-induced defects as a function of the ion fluence has been studied as a function of depth below the surface using 0.5-25 keV positron beam based Doppler annihilation-ray broadening spectrometry. Results show the detection of two different kinds of defects, depending on the ion fluence. (C) 2008 Elsevier B.V. All rights reserved.

Mots clés: positron annihilation; point defects and defect clusters; semiconductors; radiation damage; POSITRON-ANNIHILATION; SILICON-CARBIDE; ELECTRON; SPECTROSCOPY

Domaines: Science des matériaux [cond-mat.mtrl-sci]

A. Gentils, M. F. Barthe, L. Thome, M. Behar. Determination of defects in 6H-SiC single crystals irradiated with 20 MeV Au ions. Applied Surface Science, 2008, 255, pp.78-80. ⟨10.1016/j.apsusc.2008.05.166⟩. ⟨in2p3-00825464⟩