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High-resolution, back-side illuminated monolithic active pixel sensor for low-energy electron imaging

Abstract : A new domain of application of monolithic active pixel sensors, with respect to particle tracking, has been triggered by the innovative idea of a nondestructive beam monitoring system in the extraction lines of a hadron-therapy center. The beam monitoring exploits secondary electrons emitted from a submicrometer thick Al foil, intersecting the beam. Electrons are accelerated in an electrostatic field. The detection of low-energy electrons, up to 30 keV, is required. The sensitivity to these energies is obtained by thinning the detector, originally fabricated in a standard VLSI technology, down to the thickness of the radiation sensitive layer. A thin entrance window, in the order of 100 nm, is provided. Monolithic active pixel sensors for low-energy electron imaging can be prospectively used in several domains: in bioscience for cell process study using radiotracers, e.g., /sup 3/H(18 keV/spl beta//sup -/) or fluorescence imaging exploiting the Hybrid Photodiodes principle, in safety or environmental studies for neutron imaging with converters directly deposited or in micro-beam facilities for position resolving in studies of living cell irradiations. The low-energy electron imaging capabilities for installation inside an HPD test facility and the results obtained with a /sup 3/H marked source are shown. The detector used is the 1/spl times/10/sup 6/ pixel MIMOSA V chip. The back-thinning up to the epitaxial layer was applied, resulting in a high resolution, back-side illuminated imager.
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http://hal.in2p3.fr/in2p3-00025403
Contributor : Dominique Girod <>
Submitted on : Monday, January 16, 2006 - 4:10:03 PM
Last modification on : Thursday, April 23, 2020 - 2:26:21 PM

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G. Deptuch, W. Dulinski, M. Caccia, M. Winter. High-resolution, back-side illuminated monolithic active pixel sensor for low-energy electron imaging. IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2005, 52, pp.1745-1754. ⟨10.1109/TNS.2005.856585⟩. ⟨in2p3-00025403⟩

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