Sub-Micron thick Step-Graded AlGaN Buffer on Silicon with a Buffer Breakdown Field Higher Than 6 MV/cm

Elodie Carneiro (1, 2) , Stéphane Rennesson (3) , S. Tamariz (4) , Fabrice Semond (4) , F Medjdoub (1, 2)

1 WIND - IEMN - WIde baNd gap materials and Devices - IEMN
2 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
3 EasyGaN
4 CRHEA - Centre de recherche sur l'hétéroepitaxie et ses applications

Domaines: Sciences de l'ingénieur [physics]

Elodie Carneiro, Stéphane Rennesson, S. Tamariz, Fabrice Semond, F Medjdoub. Sub-Micron thick Step-Graded AlGaN Buffer on Silicon with a Buffer Breakdown Field Higher Than 6 MV/cm. International Workshop on Nitride Semiconductors, IWN 2022, Oct 2022, Berlin, Germany. ⟨hal-03829087⟩