Towards high buffer breakdown field and high temperature stability AlGaN channel HEMTs on silicon substrate

Jash Mehta (1) , Idriss Abid (1) , Julien Bassaler (2) , Julien Pernot (2) , Philippe Ferrandis (3) , Stephanie Rennesson (4) , T.H. Ngo (5) , Maud Nemoz (5) , Sébastian Tamariz (5) , Yvon Cordier (5) , Fabrice Semond (5) , F Medjdoub (1)

1 WIND - IEMN - WIde baNd gap materials and Devices - IEMN
2 NEEL - SC2G - Semi-conducteurs à large bande interdite
3 UTLN - Université de Toulon
4 EasyGaN
5 CRHEA - Centre de recherche sur l'hétéroepitaxie et ses applications

The rapidly increasing power demand, downsizing of power electronics and material specific performance limitation of silicon has led to the development of AlGaN/GaN heterostructures for high power applications. In this frame, emerging AlxGa1-xN channel based heterostructures show promising features for next generation of power electronics. In this work, we propose the study of breakdown field variation through the AlGaN channel HEMTs-on-Silicon with various Al composition. The fabricated devices exhibited remarkable buffer breakdown field > 2.5 MV/cm for sub-micron heterostructures grown on silicon substrate. Furthermore, we also experimentally demonstrate that Al-rich AlGaN channel enable both boosting the 3-terminal transistor breakdown voltage and also benefiting from a superior thermal stability.

Domaines: Sciences de l'ingénieur [physics]

Jash Mehta, Idriss Abid, Julien Bassaler, Julien Pernot, Philippe Ferrandis, et al.. Towards high buffer breakdown field and high temperature stability AlGaN channel HEMTs on silicon substrate. Compound Semiconductor Week, CSW 2022, Jun 2022, Ann Arbor, MI, United States. 2 p. ⟨hal-03828829⟩