Electro-Acoustic Properties of Scandium-Doped Aluminum Nitride (Sc<sub>x</sub>Al<sub>1-x</sub>N) Material and its Application to Phononic Crystal-Coupled SAW Devices - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Crystals Année : 2022

Electro-Acoustic Properties of Scandium-Doped Aluminum Nitride (ScxAl1-xN) Material and its Application to Phononic Crystal-Coupled SAW Devices

Résumé

Within the framework of the Density Functional Theory, the elastic, dielectric, and piezoelectric coefficients of w-ScxAl1−xN material were investigated for scandium (Sc) concentrations x = 0 to 0.375. The electro-acoustic properties are used to investigate the frequency response of the SAW delay line, based on the tilt θ° of the normal c-axis of the w-ScxAl1−xN piezoelectric thin film. We found that the piezoelectric response is improved as the Sc concentration increases, which is consistent with existing works in the literature. A 2D-phononic crystal pillars was then grafted on top of the surface, and the dependence of the acoustic band gaps is investigated with the help of the finite element method as a function of the Sc concentration and the tilted angle of w-Sc0.375Al0.625N. It was found that the two first band gaps exhibit a shift toward low frequencies with increasing Sc concentration. Moreover, the second acoustic bandgap is more sensitive to the inclination angle than the first. Furthermore, the insertion loss (S21) of w-Sc0.375Al0.625N is improved by 22 dB at θ° = 60°. The c-axis tilted Sc0.375Al0.625N-SAW delay line coupled with 2D-phononic crystals is a promising structure for low-loss and high-frequency SAW devices.
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hal-03818965 , version 1 (18-10-2022)

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Fahima Arab, Fares Kanouni, Rafik Serhane, Yan Pennec, Zafer Özer, et al.. Electro-Acoustic Properties of Scandium-Doped Aluminum Nitride (ScxAl1-xN) Material and its Application to Phononic Crystal-Coupled SAW Devices. Crystals, 2022, 12 (10), pp.1431. ⟨10.3390/cryst12101431⟩. ⟨hal-03818965⟩
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