Optoelectronic THz mixer based on iron-doped InGaAs in a plasmonic microcavity

C. Tannoury (1) , V. Merupo (1) , Vanessa Avramovic (2, 1) , R. Kohlhaas (3) , Guillaume Ducournau (1, 4) , B. Globisch (3) , Emilien Peytavit (1, 4)

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
2 PCMP - IEMN - Plateforme de Caractérisation Multi-Physiques - IEMN
3 Fraunhofer HHI - Fraunhofer Institute for Telecommunications - Heinrich Hertz Institute
4 PHOTONIQUE THZ - IEMN - Photonique THz - IEMN

We present an optoelectronic THz mixer based on irondoped InGaAs integrated into a plasmonic microcavity. The measured conversion loss is as low as ∼30 dB at 300 GHz, which constitutes a 30 dB improvement in comparison to state-of-the-art photoconductors without a plasmonic microcavity. In particular for application as receivers in high-data rate wireless telecom the presented design is very promising.

Domaines: Sciences de l'ingénieur [physics]

C. Tannoury, V. Merupo, Vanessa Avramovic, R. Kohlhaas, Guillaume Ducournau, et al.. Optoelectronic THz mixer based on iron-doped InGaAs in a plasmonic microcavity. 2022 47th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz), Aug 2022, Delft, Netherlands. pp.1-1, ⟨10.1109/IRMMW-THz50927.2022.9895790⟩. ⟨hal-03794818⟩