Nanoprobe study of the electric field driven insulator-to-metal transition in GaMo4S8

H. Koussir (1) , Isabelle Lefebvre (1, 2) , Maxime Berthe (1, 3) , Y. Chernukha (1) , J. Tranchant (4) , B. Corraze (4) , Etienne Janod (4) , Laurent Cario (4) , B. Grandidier (1, 2) , Pascale Diener (1, 2)

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
2 PHYSIQUE - IEMN - Physique - IEMN
3 PCMP - IEMN - Plateforme de Caractérisation Multi-Physiques - IEMN
4 IMN - Institut des Matériaux de Nantes Jean Rouxel

The resistive switching observed under electric pulses in Mott materials has a high potential for micro and nanoelectronics. Here we report on the study of the resistive switching observed at the surface of single crystals of the canonical Mott semiconductor GaMo4S8. The study is made using a multiprobe setup with 4 nanopositionable tips under the supervision of a high resolution scanning electron microscop. We find a resistivity of 38 Ω.cm by four-point probe measurements, in agreement with the literature. The volatile insulator to metal transition is studied with a two probes configuration for interelectrode distances varying between 4 and 200 microns. Finite element simulations are performed to determine the spatial distribution of the electric field prior to the transition. Our results are in agreement with i) an intrinsic voltage threshold of 60 mV independent of the interelectrode distance ii) a maximum electric field close to the electrodes and iii) a threshold electric field of 0.2 kV/cm.

Domaines: Matière Condensée [cond-mat]

H. Koussir, Isabelle Lefebvre, Maxime Berthe, Y. Chernukha, J. Tranchant, et al.. Nanoprobe study of the electric field driven insulator-to-metal transition in GaMo4S8. Strongly Correlated Electron Systems (SCES 2020), Sep 2021, Campinas, Brazil. Journal of Physics: Conference Series, Volume 2164, 012046, 4 p., ⟨10.1088/1742-6596/2164/1/012046⟩. ⟨hal-03753819⟩