Chemical imaging of oxide confinement layers in GaAs/AlxGa1−xAs VCSELs

Merwan Mokhtari (1) , Philippe Pagnod-Rossiaux (2) , Christophe Levallois (3) , Alexandre Pofelski (4) , François Laruelle (2) , Gianluigi A Botton (4) , Jean-Pierre Landesman (3)

1 IPR - Institut de Physique de Rennes
2 3SP Technologies
3 FOTON - Institut des Fonctions Optiques pour les Technologies de l'informatiON
4 McMaster University [Hamilton, Ontario]

The authors have studied the lateral oxidation of Al x Ga 1−x As layers buried in vertical-cavity surface-emitting lasers using cross-sectional scanning transmission electron microscopy coupled with electron energy loss spectroscopy. Chemical maps and composition profiles of the oxidized AlO x layers have been produced. The sensitivity is such that trace compositions of a few % As and Ga can be detected in the AlO x with a spatial resolution of a few nanometers on the recorded chemical maps. To demonstrate the performance of the mapping technique, we compare results from an area in the vertical-cavity surface-emitting laser (VCSEL) which is pure Al x Ga 1−x As to an oxidized area. These measurements are performed on a thin sample prepared by the focused ion beam technique within an actual VCSEL, which makes the mapping technique applicable for degradation investigations in devices at different stages of their lifetime. More generally, this measurement method is effective for detailed evaluation of AlO x layers and their fabrication process.

Mots clés: electron microscopy; chemical mapping; VCSEL; lateral oxidation

Domaines: Matériaux; Physique [physics]

Merwan Mokhtari, Philippe Pagnod-Rossiaux, Christophe Levallois, Alexandre Pofelski, François Laruelle, et al.. Chemical imaging of oxide confinement layers in GaAs/AlxGa1−xAs VCSELs. Semiconductor Science and Technology, 2022, 37 (7), pp.075016. ⟨10.1088/1361-6641/ac7070⟩. ⟨hal-03695451⟩