Ultrafast LT-GaAs photoconductors based on a Fabry-Pérot cavity designed for 1550 nm wavelength illumination

Maximilien Billet (1) , Yann Desmet (2, 3) , Fuanki Bavedila (2) , Guillaume Ducournau (2, 3) , Stefano Barbieri (2, 3) , Jean-Francois Lampin (2, 3) , Emilien Peytavit (2, 3)

1 PhLAM - Laboratoire de Physique des Lasers, Atomes et Molécules - UMR 8523
2 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
3 PHOTONIQUE THZ - IEMN - Photonique THz - IEMN

We study low-temperature-grown GaAs (LT-GaAs) based ultrafast Fabry-Pérot cavity photoconductors, designed for THz optoelectronics applications using 1550 nm pulsed lasers. We present here, as a proof of concept, the under-sampling of continuous RF waves up to 67 GHz.

Mots clés: Photoconducting materials; Radio frequency; Frequency measurement; Cavity resonators; Optical fibers; Optical pumping

Domaines: Sciences de l'ingénieur [physics]

Maximilien Billet, Yann Desmet, Fuanki Bavedila, Guillaume Ducournau, Stefano Barbieri, et al.. Ultrafast LT-GaAs photoconductors based on a Fabry-Pérot cavity designed for 1550 nm wavelength illumination. 2017 42nd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Aug 2017, Cancun, Mexico. pp.17259323, ⟨10.1109/IRMMW-THz.2017.8066941⟩. ⟨hal-03692168⟩