Hot-carrier injections in SiO2

Dominique Vuillaume (1) , Alain Bravaix (2, 3) , D Goguenheim (2, 3)

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
2 Yncréa Méditerrané
3 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

We review the hot-carrier injection phenomena in gate-oxide and the related degradation in silicon MOSFETs. We discuss the basic degradation mechanisms and the nature of the created defects by carrier injections through the gate-oxide. Emphasis is put on the discussion of dynamic hot-carrier injections in MOSFETs and on the stress induced leakage currents in very thin (<∼5 nm) gate-oxide.

Mots clés: Hot-carriers; MOSFETs; Ac stress; thin gate-oxide; carrier injections

Domaines: Sciences de l'ingénieur [physics]

Dominique Vuillaume, Alain Bravaix, D Goguenheim. Hot-carrier injections in SiO2. Microelectronics Reliability, 1998, Microelectronics Reliability, 38 (1), pp.7-22. ⟨10.1016/S0026-2714(97)00179-0⟩. ⟨hal-03674471⟩