Investigation on GaN channel thickness downscaling in high electron mobility transistor structures grown on AlN bulk substrate

Reda Elwaradi , C. Bougerol (1) , Jash Mehta (2, 3) , Maud Nemoz (4) , F Medjdoub (2, 3) , Yvon Cordier (4)

1 NEEL - NPSC - Nanophysique et Semiconducteurs
2 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
3 WIND - IEMN - WIde baNd gap materials and Devices - IEMN
4 CRHEA - Centre de recherche sur l'hétéroepitaxie et ses applications

Domaines: Sciences de l'ingénieur [physics]

Reda Elwaradi, C. Bougerol, Jash Mehta, Maud Nemoz, F Medjdoub, et al.. Investigation on GaN channel thickness downscaling in high electron mobility transistor structures grown on AlN bulk substrate. WOCSDICE EXMATEC 2022, May 2022, Ponta Delgada, Portugal. ⟨hal-03681811⟩