In situ electrical and mechanical study of Indium Tin Oxide films deposited on polyimide substrate by Xe ion beam sputtering

T. Chommaux (1, 2) , P.O. Renault (2) , D. Thiaudière (1) , P. Godard (2) , F. Paumier (3) , T. Girardeau (3) , S. Hurand (3) , Ph. Goudeau (2)

1 SSOLEIL - Synchrotron SOLEIL
2 SIMAC - Surface, Interfaces et MAtériaux sous Contrainte [Institut Pprime]
3 PPNa - Physique et Propriétés des Nanostructures [Institut Pprime]

Four series of Indium Tin Oxide (ITO) thin films 600 nm thick were deposited on polyimide substrates by Xe ion beam sputtering under different deposition conditions: with or without O2 flow, and at room temperature or 100 °C heated substrates. Both electrical and mechanical properties of the four different films were investigated in situ by electrical resistance measurements and synchrotron x-ray diffraction during equibiaxial deformation tests. The ITO films are found to have a low elastically anisotropy, i.e. an elastic anisotropy index slightly smaller than 1. The elastic regime domain is quite small and is associated to a small effective negative gauge factor. During biaxial straining, electrical measurements show that all films are very brittle with crack onset strains corresponding to applied strains ranging from 0.15 to 0.3%. The introduction of oxygen flow during deposition delays the crack onset as the decrease of deposition temperature does.

Mots clés: In situ deformation; Synchrotron x-ray diffraction; Electrical properties; Mechanical properties; Indium tin oxide; Thin films; Elastic anisotropy

Domaines: Physique [physics]; Sciences de l'ingénieur [physics]

T. Chommaux, P.O. Renault, D. Thiaudière, P. Godard, F. Paumier, et al.. In situ electrical and mechanical study of Indium Tin Oxide films deposited on polyimide substrate by Xe ion beam sputtering. Thin Solid Films, 2022, 741, pp.139035. ⟨10.1016/j.tsf.2021.139035⟩. ⟨hal-03681289⟩