Low-loss GaN-on-insulator platform for integrated photonics
Résumé
III-Nitride semiconductors are promising materials for on-chip integrated photonics. They provide a wide transparency window from the ultraviolet to the infrared that can be exploited for second-order nonlinear conversions. Here we demonstrate a photonics platform based on epitaxial GaN-on-insulator on silicon. The transfer of the epi-material on SiO 2 is achieved through wafer bonding. We show that quality factors up to 230 000 can be achieved with this platform at telecommunication wavelengths. Resonant second harmonic generation is demonstrated with a continuous wave conversion efficiency of 0.24%/W.
Domaines
Optique / photonique
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