HCI degradation model based on the diffusion equation including the MVHR model

D. Lachenal (1, 2) , F. Monsieur (2) , Y. Rey-Tauriac (2) , Alain Bravaix (3, 1)

1 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence
2 ST-CROLLES - STMicroelectronics [Crolles]
3 Yncréa Méditerrané

This paper presents an improvement of the R-D model explaining analytically the 0.5 exponent observed during HCI stress. An original model based on diffusion equation is proposed where the balance between the hot-hole-induced generation of dangling bonds and the passivation mechanisms via a Multi-Vibrational Hydrogen Release is enlightened. The second and smaller slope observed is explained and modelled with the hot spot displacement along the Si-SiO2 interface.

Mots clés: HCI; R-D model; MVHR; NLDEMOS

Domaines: Sciences de l'ingénieur [physics]

D. Lachenal, F. Monsieur, Y. Rey-Tauriac, Alain Bravaix. HCI degradation model based on the diffusion equation including the MVHR model. Microelectronic Engineering, 2007, 84 (9-10), pp.1921-1924. ⟨10.1016/j.mee.2007.04.022⟩. ⟨hal-03661013⟩