A 140 GHz to 170 GHz active tunable noise source development in SiGe BiCMOS 55 nm technology

Victor Fiorese (1, 2) , Joao Carlos , Azevedo Goncalves , Simon Bouvot (1) , Emmanuel Dubois (2, 3) , Christophe Gaquière (2, 4) , Guillaume Ducournau (2, 5) , François Danneville (2, 6) , Sylvie Lépilliet (2, 7) , Daniel Gloria (1)

1 ST Microélectronics
2 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
3 MICROELEC SI - IEMN - Microélectronique Silicium - IEMN
4 PUISSANCE - IEMN - Puissance - IEMN
5 PHOTONIQUE THZ - IEMN - Photonique THz - IEMN
6 ANODE - IEMN - Advanced NanOmeter DEvices - IEMN
7 PCMP - IEMN - Plateforme de Caractérisation Multi-Physiques - IEMN

A new approach of millimeter wave (mmW) integrated active noise source (NS) is introduced for noise characterization up to 170 GHz. This NS is based on a diode biased in avalanche regime in BiCMOS 55 nm (B55) technology from STMicroelectronics. In order to increase the noise sensitivity of setup using this NS, a two-stage cascode Low Noise Amplifier (LNA) composed of 4 high speed NPN transistors is cascaded at its output, targeting high available Excess Noise Ratios (ENRav). ENRav levels have been extracted, showing tunable values ranged between 0 dB to 37 dB in the 140-170 GHz frequency range.

Domaines: Micro et nanotechnologies/Microélectronique

Victor Fiorese, Joao Carlos, Azevedo Goncalves, Simon Bouvot, Emmanuel Dubois, et al.. A 140 GHz to 170 GHz active tunable noise source development in SiGe BiCMOS 55 nm technology. 16th European Microwave Integrated Circuits Conference, EuMIC 2021, Apr 2022, London, United Kingdom. pp.125-128, ⟨10.23919/EuMIC50153.2022.9783645⟩. ⟨hal-03637553⟩