[Invited] AlGaN Channel HEMTs for High Voltage Applications

F Medjdoub (1, 2) , Jash Mehta (1, 2) , Idriss Abid (1, 2) , Yvon Cordier (3) , Fabrice Semond (3)

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
2 WIND - IEMN - WIde baNd gap materials and Devices - IEMN
3 CRHEA - Centre de recherche sur l'hétéroepitaxie et ses applications

GaN high electron mobility transistors (HEMT) are becoming the mainstream for high frequency and power switching applications. Devices and circuits based on these emerging materials are more suited to operate at higher voltages and temperatures than Si-based devices owing to their superior physical properties. Recently, AlGaN/GaN based high electron mobility transistors (HEMTs) on low cost silicon substrate have been extensively demonstrated as attractive candidates for next generation power devices in the 100-650V range with low on-resistances. On the other hand, Ultra-Wide Band Gap (UWBG) materials such as AlN that has a bandgap of 6.2 eV are attracting attention for pushing the limits and address new requirements of high voltage power devices. In this presentation, we will discuss various device designs and preliminary results already showing the advantages and benefits of these new material systems for high voltage applications.

Domaines: Sciences de l'ingénieur [physics]

F Medjdoub, Jash Mehta, Idriss Abid, Yvon Cordier, Fabrice Semond. [Invited] AlGaN Channel HEMTs for High Voltage Applications. MRS Spring Meeting & Exhibit, MRS 2022 spring meeting, May 2022, Honolulu (Online), United States. ⟨hal-03637419⟩