Impact of la Concentration on Ferroelectricity of La-Doped HfO2Epitaxial Thin Films
Résumé
Epitaxial thin films of HfO2 doped with La have been grown on SrTiO3(001) and Si(001), and the impact of the La concentration on the stabilization of the ferroelectric phase has been determined. Films with 2-5 at. % La doping present the least amount of paraelectric monoclinic and cubic phases and exhibit the highest polarization, having a remanent polarization above 20 μC/cm2. The dopant concentration results in an important effect on the coercive field, which is reduced with increasing La content. Combined high polarization, high retention, and high endurance of at least 1010 cycles is obtained in 5 at. % La-doped films.
Mots clés
Epitaxial growth
Ferroelectric films
Hafnium oxides
Lanthanum
Polarization
Semiconductor doping
Silicon
Silicon compounds
Strontium titanates
Thin films
Titanium compounds
Epitaxial HfO2
Epitaxial oxide on silicon
Epitaxial thin films
Ferroelectric HfO2
Ferroelectric oxides
Ferroelectric phasis
La doping
Monoclinic phase
Paraelectrics
Thin-films
Ferroelectricity
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