Influence of the synthesis conditions of silicon nanodots in an industrial low pressure chemical vapor deposition reactor

Vanessa Cocheteau (1) , Emmanuel Scheid (2) , Pierre Mur (3) , Thierry Billon (3) , Brigitte Caussat (1)

1 LGC - Laboratoire de Génie Chimique
2 LAAS - Laboratoire d'analyse et d'architecture des systèmes
3 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information

Experiments conducted in an industrial tubular low pressure chemical vapor deposition (LPCVD) reactor have demonstrated the reproducibility and spatial uniformity of silicon nanodots (NDs) area density and mean radius. The wafer to wafer uniformity was satisfactory (density and radius standard deviations <10%) for the whole conditions tested except for low silane flow rates, high silane partial pressures and short run durations(<20 s). Original synthesis conditions have then been searched to reach both excellent wafer to wafer uniformities along the industrial load of wafers and high NDs densities. From previous results, it was deduced that the key was to markedly increase run duration in decreasing temperature and in increasing silane pressure. At 773 K, run durations as long as 180 and 240 s have thus allowed to reach NDs densities respectively equal to 9 1011 and 6.5 1011 NDs/cm2 for the two highest silane pressures tested in the range 60–150 Pa.

Mots clés: Silicon nanodots; Chemical vapor deposition; Area density; Ellipsometry; SEM

Domaines: Génie chimique

Vanessa Cocheteau, Emmanuel Scheid, Pierre Mur, Thierry Billon, Brigitte Caussat. Influence of the synthesis conditions of silicon nanodots in an industrial low pressure chemical vapor deposition reactor. Applied Surface Science, 2008, vol. 2 (n° 10), pp.2927 -2933. ⟨10.1016/j.apsusc.2007.10.050⟩. ⟨hal-03580047⟩