Up to 300 K lasing with GeSn-On-Insulator microdisk resonators

A Bjelajac , M Gromovyi , E Sakat , B Wang , G Patriarche , N Pauc , V Calvo , Philippe Boucaud (1) , F Boeuf , A Chelnokov , V Reboud , M Frauenrath , J-M Hartmann , M El Kurdi (2)

1 CRHEA - Centre de recherche sur l'hétéroepitaxie et ses applications
2 C2N - Centre de Nanosciences et de Nanotechnologies

GeSn alloys are the most promising direct band gap semiconductors to demonstrate full CMOS-compatible laser integration with a manufacturing from Group-IV materials. Here, we show that room temperature lasing, up to 300 K, can be obtained with GeSn. This is achieved in microdisk resonators fabricated on a GeSn-On-Insulator platform by combining strain engineering with a thick layer of high Sn content GeSn.

Domaines: Science des matériaux [cond-mat.mtrl-sci]; Optique / photonique

A Bjelajac, M Gromovyi, E Sakat, B Wang, G Patriarche, et al.. Up to 300 K lasing with GeSn-On-Insulator microdisk resonators. Optics Express, 2022, 30, pp.3954-3961. ⟨10.1364/oe.449895⟩. ⟨hal-03539837⟩