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Article Dans Une Revue Moroccan Journal of Condensed Matter Année : 2006

Cr-based MOCVD layers as conducting diffusion barriers for copper metallization

Résumé

Two types of amorphous Cr-based thin films, CrCxNy and CrSixCy, were grown by low pressure MOCVD on Si substrates using respectively Cr(NEt2)4 and Cr[CH2SiMe3]4 as single-source precursor in the low temperature range 400-420 °C and 475-500 °C. Their properties as conducting diffusion barrier against Cu were investigated and the results are discussed. CrSixCy exhibits a better thermal stability and a good Cu wettability but a high resistivity, which is detrimental for this application. CrCxNy has a low resistivity, a satisfactory stability up to 650 °C without undesirable interfacial reactions and an excellent conformality.

Domaines

Matériaux
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Dates et versions

hal-03481707 , version 1 (15-12-2021)

Identifiants

  • HAL Id : hal-03481707 , version 1
  • OATAO : 2751

Citer

Francis Maury, Florin-Daniel Duminica, Cyril Gasquères. Cr-based MOCVD layers as conducting diffusion barriers for copper metallization. Moroccan Journal of Condensed Matter, 2006, 7 (1), pp.16-21. ⟨hal-03481707⟩
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