Electrical and mechanical characterisation of Si/Al ohmic contacts on diamond

Gabriel Civrac de Fabian (1) , Sabeur Msolli (2) , Joël Alexis (2) , Olivier Dalverny (2) , Henri Schneider (1)

1 LAAS-ISGE - Équipe Intégration de Systèmes de Gestion de l'Énergie
2 LGP - Laboratoire Génie de Production

A new ohmic contact technology on diamond with low resistivity is presented. A Si/AI metallisation is used and leads to a 7 10-6 A.cm2 specific contact resistivity, measured by the transfer length method. Comparison is made between this technology and the Ti/Pt/Au traditional technology. Both technologies show very good electrical, thermal and mechanical characteristics.

Mots clés: Aluminium compounds; Diamond; Electrical resistivity; Mechanical properties; Ohmic contacts; Silicon compounds

Domaines: Matériaux

Gabriel Civrac de Fabian, Sabeur Msolli, Joël Alexis, Olivier Dalverny, Henri Schneider. Electrical and mechanical characterisation of Si/Al ohmic contacts on diamond. Electronics Letters, 2010, 46 (11), pp.791-793. ⟨10.1049/el.2010.0803⟩. ⟨hal-03474199⟩