Impact of the ridge etching‐depth on GaSb‐based laser diodes

Laura Monge‐bartolome (1, 2) , Laurent Cerutti (1, 2) , Eric Tournié (1, 2)

1 IES - Institut d’Electronique et des Systèmes
2 NANOMIR - Composants à Nanostructure pour le moyen infrarouge

We have fabricated from the same epitaxial wafer series of GaSb-based Fabry-Pérot laser diodes emitting near 2.3 μm with different ridge etching-depths. The analysis of the device performances allows quantifying the detrimental impact of deep ridge etching. The threshold current density is increased, whereas the external differential quantum efficiency is reduced, due to a reduced internal quantum efficiency and higher optical losses.

Domaines: Optique / photonique

Laura Monge‐bartolome, Laurent Cerutti, Eric Tournié. Impact of the ridge etching‐depth on GaSb‐based laser diodes. Electronics Letters, 2021, ⟨10.1049/ell2.12392⟩. ⟨hal-03472735⟩