Electron Transport in Double-Barrier Semiconductor Heterostructures for Thermionic Cooling

Xiangyu Zhu (1) , Marc Bescond (2) , Toshiki Onoue (1) , Gerald Bastard (3) , Francesca Carosella (3) , Robson Ferreira (3) , Naomi Nagai (1) , Kazuhiko Hirakawa (4)

1 UTokyo - The University of Tokyo
2 L2MP - Laboratoire matériaux et microélectronique de Provence
3 Théorie de la Matière Condensée
4 LIMMS - Laboratory for Integrated Micro Mechatronics Systems

We investigate electron transport in asymmetric double-barrier (Al, Ga)As/GaAs thermionic cooling heterostructures. Measurements of temperature-dependent current-voltage characteristics confirm that the dominant electron transport is a sequential process of resonant tunneling injection into and thermionic emission from the quantum-well (QW) cooling layer. The thermal activation energy of the current is found to be strongly dependent on the bias voltage. Furthermore, instead of showing a simple thermal activation behavior, the current exhibits rather complicated temperature and voltage dependence, particularly when the thermionic emission barrier is low. To establish a quantitative understanding, we develop an intuitive analytical model for sequential electron transport that explicitly takes into account scattering effects in the thermionic emission process from the two-dimensional QW states to the three-dimensional above-barrier states. The observed temperature-dependent sequential current is well explained by the present theory.

Domaines: Physique [physics]

Xiangyu Zhu, Marc Bescond, Toshiki Onoue, Gerald Bastard, Francesca Carosella, et al.. Electron Transport in Double-Barrier Semiconductor Heterostructures for Thermionic Cooling. Physical Review Applied, 2021, 16 (6), ⟨10.1103/physrevapplied.16.064017⟩. ⟨hal-03472656⟩