Performance of Edgeless Silicon Pixel Sensors on p-type substrate for the ATLAS High-Luminosity Upgrade
Résumé
In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate to achieve a large area instrumented with pixel sensors, since it is radiation hard and cost effective. The paper reports on the performance of novel n-on-p edgeless planar pixel sensors produced by FBK-CMM, making use of the active trench for the reduction of the dead area at the periphery of the device. After discussing the sensor technology an overview of the first beam test results will be given.
Mots clés
Detectors
Telescopes
Threshold voltage
Metals
Silicon
Sensor phenomena and characterization
transition radiation detectors
silicon radiation detectors
beam test
edgeless silicon pixel sensor performance
p-type substrate
ATLAS High-Luminosity Upgrade
LHC upgrade phases
High Luminosity LHC
ATLAS experiment
all-silicon system
n-on-p silicon technology
radiation hard sensors
n-on-p edgeless planar pixel sensors
FBK-CMM
dead area
pixel sensor technology
HL-LHC tracker
Silicon pixel sensors
edgeless sensors
radiation detectors
semiconductor detector: pixel
semiconductor detector: technology
performance
ATLAS
tracking detector: upgrade