Role of H 3 + ions in deposition of silicon thin films from SiH 4 /H 2 discharges: modeling and experiments

Tinghui Zhang (1) , Jean-Maxime Orlac’h (1, 2) , Monalisa Ghosh (1) , Vincent Giovangigli (3) , Pere Roca I Cabarrocas (1) , Tatiana Novikova (1)

1 LPICM - Laboratoire de physique des interfaces et des couches minces [Palaiseau]
2 DAAA, ONERA, Université Paris-Saclay [Châtillon]
3 CMAP - Centre de Mathématiques Appliquées - Ecole Polytechnique

Domaines: Biotechnologie

Tinghui Zhang, Jean-Maxime Orlac’h, Monalisa Ghosh, Vincent Giovangigli, Pere Roca I Cabarrocas, et al.. Role of H 3 + ions in deposition of silicon thin films from SiH 4 /H 2 discharges: modeling and experiments. Plasma Sources Science and Technology, 2021, 30 (7), pp.075024. ⟨10.1088/1361-6595/ac0da2⟩. ⟨hal-03447562⟩