Conduction Mechanisms in Au/0.8 nm–GaN/n–GaAs Schottky Contacts in a Wide Temperature Range

Hicham Helal (1, 2) , Zineb Benamara (1) , Mouhamed Amine Wederni (3) , Sabrine Mourad (4) , Kamel Khirouni (4) , Guillaume Monier (5) , Christine Robert-Goumet (5) , Abdelaziz Rabehi (1) , Arslane Hatem Kacha (1) , Hicham Bakkali (2) , Lionel C Gontard (2) , Manuel Dominguez (2)

1 UDL - جامعة جيلالي اليابس [سيدي بلعباس، الجزائر] = Université Djillali Liabès [Sidi Bel Abbès, Algérie] = Djillali Liabes University [Sidi Bel Abbès, Algeria]
2 UCA - Universidad de Cádiz = University of Cádiz
3 UNIV-K - Université de Kairouan
4 Université de Gabès
5 IP - Institut Pascal

Au/0.8 nm–GaN/n–GaAs Schottky diodes were manufactured and electrically characterized over a wide temperature range. As a result, the reverse current Iinv increments from 1 × 10−7 A at 80 K to about 1 × 10−5 A at 420 K. The ideality factor n shows low values, decreasing from 2 at 80 K to 1.01 at 420 K. The barrier height qϕb grows abnormally from 0.46 eV at 80 K to 0.83 eV at 420 K. The tunnel mechanism TFE effect is the responsible for the qϕb behavior. The series resistance Rs is very low, decreasing from 13.80 Ω at 80 K to 4.26 Ω at 420 K. These good results are due to the good quality of the interface treated by the nitridation process. However, the disadvantage of the nitridation treatment is the fact that the GaN thin layer causes an inhomogeneous barrier height.

Mots clés: nitridation; GaN/n-GaAs; Schottky diode; I-V-T; conduction mechanisms; barrier height

Domaines: Science des matériaux [cond-mat.mtrl-sci]; Micro et nanotechnologies/Microélectronique

Hicham Helal, Zineb Benamara, Mouhamed Amine Wederni, Sabrine Mourad, Kamel Khirouni, et al.. Conduction Mechanisms in Au/0.8 nm–GaN/n–GaAs Schottky Contacts in a Wide Temperature Range. Materials, 2021, 14 (20), pp.5909. ⟨10.3390/ma14205909⟩. ⟨hal-03430150⟩