GaN schottky diode on silicon substrate for high power THz multiplier

Giuseppe Di Gioia (1) , M Samnouni (1) , H Bouillaud (1) , P Mondal (2) , J Treuttel (2) , Yvon Cordier (3) , Malek Zegaoui (1, 4) , Guillaume Ducournau (1, 5) , Yannick Roelens (1, 6) , Mohammed Zaknoune (1, 6)

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
2 LERMA - LERMA Cergy
3 Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications
4 IRCICA - Institut de Recherche sur les Composants logiciels et matériels pour l'Information et la Communication Avancé - UAR 3380
5 PHOTONIQUE THZ - IEMN - Photonique THz - IEMN
6 ANODE - IEMN - Advanced NanOmeter DEvices - IEMN

GaN-based planar Schottky barrier diodes with potential applications in THz frequency multipliers were fabricated on silicon substrate and characterized. GaN is a promising candidate to overcome all the physical limitations of GaAs which have been reached in the frame of high frequency power multiplier applications. Fabrication process of GaN Schottky diodes performed by e-beam is presented and DC characterizations are reported. Preliminary results on silicon showed a low breakdown voltage.

Domaines: Micro et nanotechnologies/Microélectronique

Giuseppe Di Gioia, M Samnouni, H Bouillaud, P Mondal, J Treuttel, et al.. GaN schottky diode on silicon substrate for high power THz multiplier. WOCSDICE 2021, Jun 2021, Bristol, United Kingdom. ⟨hal-03384345⟩