Introducing 3-nm Nano-Sheet FET technology in Microwind

Etienne Sicard (1) , Lionel Trojman (2)

1 INSA Toulouse - Institut National des Sciences Appliquées - Toulouse
2 ISEP - Institut Supérieur d'Electronique de Paris

This paper describes the implementation of the novel Nano-sheet FET (NS-FET) for the 3-nm CMOS technology node in Microwind. After a general presentation of the electronic market and the roadmap to the atomic scale, design rules and basic metrics for the 3-nm node are presented. Concepts related to the design of NS-FET and design for manufacturing are also described. The performances of a ring oscillator, basic cells, sequential cells and a 6-transistor RAM memory are also analyzed.

Mots clés: Nano-Sheet; NSFET; CMOS design; 3-nm; Ring oscillator; interconnects; SRAM; logic gates; microwind

Domaines: Micro et nanotechnologies/Microélectronique

Etienne Sicard, Lionel Trojman. Introducing 3-nm Nano-Sheet FET technology in Microwind. 2021. ⟨hal-03377556⟩