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Article Dans Une Revue Physical Review Applied Année : 2021

Dispersively probed microwave spectroscopy of a silicon hole double quantum dot

Tristan Meunier

Résumé

Owing to ever increasing gate fidelities and to a potential transferability to industrial CMOS technology, silicon spin qubits have become a compelling option in the strive for quantum computation. In a scalable architecture, each spin qubit will have to be finely tuned and its operating conditions accurately determined. In view of this, spectroscopic tools compatible with a scalable device layout are of primary importance. Here we report a two-tone spectroscopy technique providing access to the spin-dependent energy-level spectrum of a hole double quantum dot defined in a split-gate silicon device. A first gigahertz-frequency tone drives electric dipole spin resonance enabled by the valence-band spin-orbit coupling. A second lower-frequency tone (approximately 500 MHz ) allows for dispersive readout via rf-gate reflectometry. We compare the measured dispersive response to the linear response calculated in an extended Jaynes-Cummings model and we obtain characteristic parameters such as g factors and tunnel and spin-orbit couplings for both even and odd occupation.
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Dates et versions

hal-03376661 , version 1 (01-06-2022)

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Rami Ezzouch, Simon Zihlmann, Vincent Michal, Jing Li, Agostino Aprá, et al.. Dispersively probed microwave spectroscopy of a silicon hole double quantum dot. Physical Review Applied, 2021, 16 (3), pp.034031. ⟨10.1103/PhysRevApplied.16.034031⟩. ⟨hal-03376661⟩
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