Optoelectronic Mixing in High-Mobility Graphene

L Hamidouche (1) , A Montanaro (1) , M Rosticher (2) , E Grimaldi (1) , B Poupet (1) , T Taniguchi (3) , K Watanabe (3) , Bernard Plaçais (4) , Emmanuel Baudin (5) , P Legagneux (1)

1 Thales Research and Technology [Palaiseau]
2 LPENS - Laboratoire de physique de l'ENS - ENS Paris
3 NIMS - National Institute for Materials Science
4 Physique Mésoscopique
5 Nano-Optique

High-mobility hexagonal boron nitride (hBN)/graphene/ hBN heterostructures are able to reach intrinsic limits of transport. Here, we investigate optoelectronic mixing, which is a demanding function combining efficient photodetection and fast carrier dynamics. Using such a heterostructure embedded in a coplanar waveguide, we obtain a record conversion efficiency of about −40 dB for frequencies up to 65 GHz. This performance is obtained at high doping in the photobolometric regime. We provide a microscopic model of the photodetection, which accurately describes the experimental observations, allows the assessment of the intrinsic limits of our device, and paves the way for device optimization by revealing the different mechanisms at play.

Mots clés: Metrics & More Article Recommendations down-conversion efficiency; photoconductivity; photobolometric effect; electronic transport; cooling mechanism; scattering

Domaines: Systèmes mésoscopiques et effet Hall quantique [cond-mat.mes-hall]

L Hamidouche, A Montanaro, M Rosticher, E Grimaldi, B Poupet, et al.. Optoelectronic Mixing in High-Mobility Graphene. ACS photonics, 2020, 8, pp.369 - 375. ⟨10.1021/acsphotonics.0c01679⟩. ⟨hal-03367950⟩