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Mm-wave single-pole double-throw switches: HBT-vs MOSFET-based designs

Abstract : This paper aims to compare the performance of HBT-based and MOSFET-based mm-Wave SPDT switches in a single BiCMOS technology. To the best of authors' knowledge, a direct comparison of this function in the same integrated process has never been reported before. Measurement results on two 50-GHz integrated SPDTs reveal that the HBT-based SPDT switch yields 1.7 dB of insertion loss and 14 dB of isolation in its central frequency, with a bandwidth covering the 30-80 GHz frequency range when considering a return loss greater than 10 dB. On the other hand, the MOSFET-based SPDT switch yields 2.1 dB of insertion loss and 12 dB of isolation at center frequency and a bandwidth covering the 33-80 GHz frequency range.
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Submitted on : Tuesday, October 5, 2021 - 9:17:25 AM
Last modification on : Tuesday, January 11, 2022 - 1:24:01 PM
Long-term archiving on: : Thursday, January 6, 2022 - 6:13:27 PM


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Marc Margalef-Rovira, Christophe Gaquière, Antonio Augusto Lisboa de Souza, L. Vincent, Manuel J. Barragan, et al.. Mm-wave single-pole double-throw switches: HBT-vs MOSFET-based designs. 19th IEEE International New Circuits and Systems Conference, NEWCAS 2021, Jun 2021, Toulon( virtual), France. ⟨10.1109/NEWCAS50681.2021.9462753⟩. ⟨hal-03362262⟩



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