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Single-pole-double-throw RF switches based on monolayer MoS2

Abstract : Recently, low-power analog switches have been enjoying rapidly growing interest owing to their proliferation in mobile and reconfigurable communication and connectivity systems often with multiple-input-multiple-output architecture [1] , [2] . To develop this ideal switch, non-volatile switches based on memory devices have been investigated with the potential of zero static power dissipation [3] - [6] . In order to attain a high figure-of-merit cutoff frequency (FCO=1/2πRON COFF), RF switches with low ON-state resistance to minimize insertion loss, and low OFF-state capacitance for maximum isolation are desirable.
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Submitted on : Friday, October 1, 2021 - 4:50:19 PM
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M. Kim, Emiliano Pallecchi, Henri Happy, D. Akinwande. Single-pole-double-throw RF switches based on monolayer MoS2. 2021 Device Research Conference, DRC 2021, Jun 2021, Santa Barbara, CA, United States. pp.9467136, ⟨10.1109/DRC52342.2021.9467136⟩. ⟨hal-03362258⟩



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