An Accurate Dual-Gate HFET Nonlinear Model for Millimeter-Wave MMIC Design

Rachid Allam (1) , Christophe Kolanowski (2) , J. C. De Jaeger , Y. Crosnier (2)

1 LAII [Poitiers] - Laboratoire d'automatique et d'informatique industrielle [EA 1219]
2 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520

An accurate nonlinear model for dual-gate HFETs is presented in this paper. Because of the complexity of the global equivalent circuit, the dual-gate transistor is modeled as two single-gate devices in cascode configuration. A good agreement between the measured and simulated performance is obtained, and its validity is proved as it was used for the design of an MMIC mixer at V-band. 

Domaines: Informatique [cs]

Rachid Allam, Christophe Kolanowski, J. C. De Jaeger, Y. Crosnier. An Accurate Dual-Gate HFET Nonlinear Model for Millimeter-Wave MMIC Design. International Journal of Microwave and Millimeter-Wave Computer-Aided Engineering, 1998, 1998 (4), pp.315--320. ⟨10.1002/(SICI)1099-047X(199807)8:4<315::AID-MMCE5>3.0.CO;2-E⟩. ⟨hal-03360875⟩