Optimising GaN heterostructures for 5G

Markus Behet , Joff Derluyn (1) , Stefan Degroote (1) , Marianne Germain (2) , F Medjdoub (3, 4)

1 SOITEC
2 EpiGaN
3 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
4 WIND - IEMN - WIde baNd gap materials and Devices - IEMN

Combining AlN or InAlN barriers with SiN passivation layers leads to exceptional performance for GaN RF devices, regardless of the choice of substrate.

Mots clés: GaN; RF devices

Domaines: Sciences de l'ingénieur [physics]

Markus Behet, Joff Derluyn, Stefan Degroote, Marianne Germain, F Medjdoub. Optimising GaN heterostructures for 5G. Compound Semiconductors, 26, 1, 2020. ⟨hal-03342380⟩