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Optimising GaN heterostructures for 5G

Abstract : Combining AlN or InAlN barriers with SiN passivation layers leads to exceptional performance for GaN RF devices, regardless of the choice of substrate.
Keywords : GaN RF devices
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Submitted on : Monday, September 13, 2021 - 12:08:23 PM
Last modification on : Tuesday, October 19, 2021 - 6:38:09 PM


  • HAL Id : hal-03342380, version 1


Markus Behet, Joff Derluyn, Stefan Degroote, Marianne Germain, Farid Medjdoub. Optimising GaN heterostructures for 5G. Compound Semiconductors, 26, 1, 2020. ⟨hal-03342380⟩



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