Skip to Main content Skip to Navigation
Other publications

Optimising GaN heterostructures for 5G

Abstract : Combining AlN or InAlN barriers with SiN passivation layers leads to exceptional performance for GaN RF devices, regardless of the choice of substrate.
Keywords : GaN RF devices
Document type :
Other publications
Complete list of metadata

https://hal.archives-ouvertes.fr/hal-03342380
Contributor : Collection Iemn Connect in order to contact the contributor
Submitted on : Monday, September 13, 2021 - 12:08:23 PM
Last modification on : Tuesday, October 19, 2021 - 6:38:09 PM

Identifiers

  • HAL Id : hal-03342380, version 1

Citation

Markus Behet, Joff Derluyn, Stefan Degroote, Marianne Germain, Farid Medjdoub. Optimising GaN heterostructures for 5G. Compound Semiconductors, 26, 1, 2020. ⟨hal-03342380⟩

Share

Metrics

Record views

7