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Communication Dans Un Congrès Année : 2021

Temperature and High Hydrostatic Pressure Investigations of Epitaxially Grown 2.3-µm GaSb lasers on Si

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hal-03336838 , version 1 (07-09-2021)

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  • HAL Id : hal-03336838 , version 1

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A. R. Ellis, I. P. Marko, T. D. Eales, Laurent Cerutti, Marta Rio Calvo, et al.. Temperature and High Hydrostatic Pressure Investigations of Epitaxially Grown 2.3-µm GaSb lasers on Si. 15th Mid-Infrared Optoelectronic Materials and Devices (MIOMD-XV), Sep 2021, Guildford (on line), United Kingdom. ⟨hal-03336838⟩
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