Graphene field effect transistors with optimized contact resistance for current gain

W. Wei (1) , D. D. Fazio , U. Sassi (2) , A. C. Ferrari , E. Pallecchi (1) , H. Happy (1)

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
2 Cambridge Graphene Centre (Cambridge, UK)

Domaines: Sciences de l'ingénieur [physics]

W. Wei, D. D. Fazio, U. Sassi, A. C. Ferrari, E. Pallecchi, et al.. Graphene field effect transistors with optimized contact resistance for current gain. 75th Annual Device Research Conference, DRC 2017, Jun 2017, South Bend, IN, USA, United States. pp.1-2, ⟨10.1109/DRC.2017.7999420⟩. ⟨hal-03335834⟩