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Optimization of Reactive-Ion Etching (RIE) parameters to maximize the lateral etch rate of silicon using SF6/N2 gas mixture: An alternative to etching Si in MEMS with Au components

Abstract : In this work, the effects of the N2 addition to the SF6 plasma used in the isotropic silicon etching of Microelectromechanical systems (MEMS) with Au components are investigated. A four-variables Doehlert design was implemented for optimizing the etching parameters (power, pressure, gas flow rate, and N2 /SF6 ratio) to maximize the lateral etch rate of Si using SF6 /N2 gas mixture. The optimized etch condition founded for a lateral etch rate of 1.8 mm/min was: power = 143 W, chamber pressure = 86 mTorr, flow rate = 22 sccm, and N2 /SF6 ratio = 0.1. Furthermore, it was demonstrated that the established etching process avoids the structure damage of Au components.
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https://hal.archives-ouvertes.fr/hal-03330078
Contributor : Cécile Ghouila-Houri Connect in order to contact the contributor
Submitted on : Wednesday, September 1, 2021 - 11:30:31 AM
Last modification on : Saturday, October 9, 2021 - 3:21:34 AM

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M Kazar Mendes, C. Ghouila Houri, S Hammami, T Arnoult, P. Pernod, et al.. Optimization of Reactive-Ion Etching (RIE) parameters to maximize the lateral etch rate of silicon using SF6/N2 gas mixture: An alternative to etching Si in MEMS with Au components. Materials Letters, Elsevier, 2021, 285, pp.129058. ⟨10.1016/j.matlet.2020.129058⟩. ⟨hal-03330078⟩

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