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Conference papers

Direct growth of III-V nanowire-based top cell for tandem on Silicon

Abstract : We grow and characterize solar cells based on Gacatalyzed GaAs NWs radial p-in homojunctions grown by Molecular Beam Epitaxy onto inactive p-type Si(111) substrates. The solar cells feature a relatively low efficiency of 2.09% mainly due to poor VOC=0.39V, FF=0.4. To assess the intrinsic quality of the GaAs NWs, we use a hyperspectral imager to determine the absolute luminescence of GaAs homojunction devices. Between 5 suns and 130 suns illumination, we find an ideality factor of 2.2 and 1.4 from J-V curves and Jsc-PL curves, respectively. Moreover, the quasi-Fermi level splitting ΔεF, which represents the maximum achievable VOC, is tentatively extracted from the absolute luminescence and is estimated to be above 0.8 V at 1 sun. It confirms the NWs high crystalline quality and indicates a considerable scope for improvement in device processing.
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Submitted on : Monday, August 30, 2021 - 11:44:56 AM
Last modification on : Sunday, June 26, 2022 - 3:12:41 AM


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Romaric de Lépinau, Capucine Tong, Andrea Scaccabarozzi, Fabrice Oehler, Hung-Ling Chen, et al.. Direct growth of III-V nanowire-based top cell for tandem on Silicon. 2020 47th IEEE Photovoltaic Specialists Conference (PVSC), Aug 2020, Calgary (virtual), Canada. ⟨10.1109/PVSC45281.2020.9300864⟩. ⟨hal-03328688⟩



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