Metal/insulator/semiconductor contacts for ultimately scaled CMOS nodes: projected benefits and remaining challenges

Julien Borrel (1, 2, 3) , Louis Hutin (1) , Helen Grampeix (1) , Emmanuel Nolot (1) , Magali Tessaire (1) , Guillaume Rodriguez (1) , Yves Morand (3) , Fabrice Nemouchi (1) , Magali Gregoire (3) , Emmanuel Dubois (2) , Maud Vinet (1)

1 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
2 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
3 ST-GRENOBLE - STMicroelectronics [Grenoble]

In this paper, some key fundamental aspects of Metal / Insulator / Semiconductor contacts as well as practical issues occurring with their implementation are reviewed in order to fully comprehend the opportunities and limitations of this approach.

Domaines: Sciences de l'ingénieur [physics]

Julien Borrel, Louis Hutin, Helen Grampeix, Emmanuel Nolot, Magali Tessaire, et al.. Metal/insulator/semiconductor contacts for ultimately scaled CMOS nodes: projected benefits and remaining challenges. IWJT 2016 - 16th International Workshop on Junction Technology, May 2016, Shanghai, China. pp.14-19. ⟨hal-03325000⟩