Introducing 45 nm technology in Microwind3

Etienne Sicard (1) , Syed Mahfuzul Aziz (2)

1 INSA Toulouse - Institut National des Sciences Appliquées - Toulouse
2 University of South Australia [Adelaide]

This paper describes the improvements related to the CMOS 45 nm technology and the implementation of this technology in Microwind3. The main novelties related to the 45 nm technology such as the high-k gate oxide, metal-gate and very low-K interconnect dielectric is described. The performances of a ring oscillator layout and a 6-transistor RAM memory layout are also analyzed.

Domaines: Micro et nanotechnologies/Microélectronique

Etienne Sicard, Syed Mahfuzul Aziz. Introducing 45 nm technology in Microwind3. 2011. ⟨hal-03324315⟩