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Introducing 45 nm technology in Microwind3

Abstract : This paper describes the improvements related to the CMOS 45 nm technology and the implementation of this technology in Microwind3. The main novelties related to the 45 nm technology such as the high-k gate oxide, metal-gate and very low-K interconnect dielectric is described. The performances of a ring oscillator layout and a 6-transistor RAM memory layout are also analyzed.
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https://hal.archives-ouvertes.fr/hal-03324315
Contributor : Etienne Sicard Connect in order to contact the contributor
Submitted on : Monday, August 23, 2021 - 2:58:42 PM
Last modification on : Tuesday, October 19, 2021 - 11:17:38 PM
Long-term archiving on: : Wednesday, November 24, 2021 - 6:38:49 PM

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  • HAL Id : hal-03324315, version 1

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Etienne Sicard, Syed Aziz. Introducing 45 nm technology in Microwind3. 2011. ⟨hal-03324315⟩

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