Thermal response and correlation between mobility and kink effect in GaN HEMTs

Mohammad A. Alim , S. Afrin , A. A. Rezazadeh , Christophe Gaquière (1, 2)

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
2 PUISSANCE - IEMN - Puissance - IEMN

This work notices the relation among the kink effect and the mobility in AlGaN/GaN HEMT and its response to temperature. The kink phenomenon found in transistor behaviour are carefully characterized at persuade point which is straightaway linked to the shallow traps positioned underneath the conduction band. A straightforward relationship among parasitic impacts within the output properties and the existence of deep levels or traps would demonstrate by a temperature-dependent mobility model. This study helps to predict the location of kink voltage in terms of gate bias near to the threshold voltage and also emphasize the impact of the mobility scattering. In expansion, the traps states for GaN HEMT grown on SiC substrate and their related activation energy based on existing literature also summarized.

Mots clés: AlGaN/GaN FET; Mobility; Kink effect; Traps; Thermal behaviour

Domaines: Sciences de l'ingénieur [physics]

Mohammad A. Alim, S. Afrin, A. A. Rezazadeh, Christophe Gaquière. Thermal response and correlation between mobility and kink effect in GaN HEMTs. Microelectronic Engineering, 2020, 219, 111148, 5 p. ⟨10.1016/j.mee.2019.111148⟩. ⟨hal-03322821⟩