Smart way to adjust Schottky barrier height in 130 nm BiCMOS process for sub-THz applications
Résumé
In this paper, an innovative Schottky diode architecture is proposed and implemented in 130 nm BiCMOS technology. A state-of-the-art 1 THz cut-off frequency is measured and an innovative way to modify the height of the Schottky barrier is proposed. This smart way could enable zero-bias high-frequency circuit designs with a very low height value of the Schottky barrier in advanced BiCMOS technology without requiring any custom implantation.