Carrier generation and recombination dynamics and reliability of InGaN-based photodetectors for high power densities - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2017
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hal-03298878 , version 1 (24-07-2021)

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  • HAL Id : hal-03298878 , version 1

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C de Santi, M Meneghini, A Caria, Ezgi Dogmus, Malek Zegaoui, et al.. Carrier generation and recombination dynamics and reliability of InGaN-based photodetectors for high power densities. 12th International Conference on Nitride Semiconductors 2017 (ICNS-12), Jul 2017, Strasbourg, France. ⟨hal-03298878⟩
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